*Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for AF am.

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